Gallium Nitride

Invited Speakers:

  • Arturo Escobosa Echavarria, Cinvestav, Mexico
    Nitridation of GaAs substrates in order to obtain cubic GaN templates
  • Fredrik Karlsson, Linköping University, Sweden
    Light Emitters Based on Elongated InGaN/GaN Pyramidal Quantum Dots for Efficient Generation of Linearly Polarised Light
  • Ikai Lo, National Sun Yet-Sen University, Taiwan
  • Jean Paul Salvestrini, LMOPS, Université de Lorraine, France
    Nanoscale selective area growth and nano structuration of InGaN materials: Application to micro LED and photovoltaics
  • Jun-youn Kim, Pricipal engineer at LED business, Samsung elec. co., Korea
    Emerging LED technology for lighting : 8″ GaN on Si & chip scale package
  • Matthew T. Hardy, Naval Research Laboratory, USA
    Growth of homogenous N-polar InAlN high-electron-mobility transistors by plasma-assisted molecular beam epitaxy
  • Miori Hiraiwa, Panasonic Corporation, Japan
    Evaluation of Dislocations in GaN Films by Means of Synchrotron Radiation X-ray Diffractometry
  • Noelle Gogneau, Laboratoire de Photonique et de Nanostructure, CNRS, France
    GaN nanowires for Piezoelectric energy harvesting: Towards wireless sensors
  • Sérgio Pereira, Universidade de Aveiro, Portugal
    Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells due to the incorporation of metallic nanocrystals
  • Shaul Aloni, Lawrence Berkeley National Laboratory, USA
    Crystallographic orientation and it’s effects on optical and chemical properties of GaN nanowires
  • Yoga Saripalli, IMEC, Belgium
    GaN Epitaxy on 200mm silicon for power electronic applications
  • Yoshio Masuda, National Institute of Advanced Industrial Science and Technology, Japan
    Numerical analysis of natural convection heat transfer in ammonothermal GaN bulk crystal growth process
  • Zhaojun Lin, Shandong University, China
    Polarization Coulomb field scattering in GaN transistors



Workshop chair:

Operating Organization



Importation Dates:

Abstract Deadline: March 1, 2016 Registration for early birds: Before January 30, 2016